solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff130 __ __ screening 2 / __ = not screen tx = tx level txv = txv level s = s level package /5= to-5 to-5 sff130/5 8 amp / 100 volts 0.18 ? n-channel power mosfet features: ? rugged construction with poly silicon gate ? low r ds(on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? hermetically sealed package ? available in both hot case and isolated versions ? ideal for low power applications ? tx, txv, space level screening available 2 / ? replacement for irff130 types maximum ratings 3 / symbol value units drain ? source voltage v ds 100 volts gate ? source voltage v gs 20 volts continuous collector current t c = 25oc t c = 100oc i d 8 5 amps power dissipation t c = 25oc t a = 25oc p d 25 19 watts operating & storage temperature top & tstg -55 to +150 oc thermal resistance junction to case r jc 5 oc/w single pulse avalanche energy e as 75 mj to-5 case outline: notes: 1 / for ordering information, price, operating curves, and availability- contact factory. 2 / screened to mil-prf-19500. 3 / unless otherwise specified, all maximum ratings and electrical characteristics @25oc. note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: f00019d doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff130/5 electrical characteristics @ t j = 25 o c (unless otherwise specified) symbol min typ max units drain to source breakdown voltage (vgs=0 v, id=250 a ) bv dss 100 ?? ?? volts temperature coefficient of breakdown voltage ? bv dss ? tj ?? 100 ?? mv/ oc drain to source on state resistance (vgs=10 v ) id=5a id=8a r ds(on) ?? 0.13 0.14 0.18 0.21 ? gate threshold voltage (vds=vgs, id=250 a ) v gs(th) 2.0 2.8 4.0 v forward transconductance (vds>id(on) x rds(on) max, ids= 9a ) g fs 3 7 ?? mho zero gate voltage drain current (vds=80% max rated voltage, vgs=0 v) (vds=80% rated vds, vgs=0 v, ta=125oc) i dss ?? ?? ?? ?? 25 250 a gate to source leakage forward gate to source leakage reverse at rated vgs i gss ?? ?? ?? ?? +100 -100 na total gate charge gate to source charge gate to drain charge vgs=10 volts 50% rated vds rated id q g q gs q gd 12 1 3.8 17 3.7 7.0 28 6.3 16.6 nc turn on delay time rise time turn on delay time fall time vdd=50% rated vds id = 8a rg= 7.5 ? t d(on) t r t d(off) t f ?? ?? ?? ?? 9.5 42 22 25 30 75 40 45 nsec diode forward voltage (is= rated id, vgs=0 v, tj=25oc) v sd ?? 1 1.5 v diode reverse recovery time reverse recovery charge t j =25oc if=10a di/dt=100a/ sec t rr q rr ?? ?? 120 0.7 300 3 nsec nc input capacitance output capacitance reverse transfer capacitance vgs=0 volts vds=25 volts f=1 mhz c iss c oss c rss ?? ?? ?? 650 250 44 ?? ?? ?? pf for thermal derating curves and other characteristics please contact ssdi marketing department. available part number: sff130/5 pin assignment (standard) package drain source gate to-5 pin 3 pin 1 pin 2 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: f00019d doc
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